2N7002T 115ma, 60v, r ds(on) 5 n-channel plastic-encapsulate mosfets elektronische bauelemente 12-jun-2018 rev. d page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features high density cell design for low r ds(on) voltage controlled small signal switch rugged and reliable high saturation current capability application load switch for portable devices dc/dc converter marking * solid dot=green molding compound device, if none, t he normal device. package information package mpq leader size sot-523 3k 7 inch order information maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current i d 115 ma power dissipation p d 150 mw thermal resistance from junction-ambient r ja 833 c/w operating junction temperature range t j 150 c operating storage temperature range t stg -55~150 c part number type 2N7002T lead (pb)-free 2N7002T-c lead (pb)-free and halogen-free 1 gate 2 source 3 drain sot-523 top view a l m c b d g h j f k e 1 2 3 1 2 3 ref. millimeter ref. millimeter min. max. min. max. a 1.5 1.7 g - 0.1 b 1.45 1.75 h 0.55 ref. c 0.7 0.9 j 0.1 0.2 d 0.7 0.9 k - e 0.9 1.1 l 0.5 typ. f 0.15 0.35 m 0.25 0.35 ? ?? ? =solid dot
2N7002T 115ma, 60v, r ds(on) 5 n-channel plastic-encapsulate mosfets elektronische bauelemente 12-jun-2018 rev. d page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage v (br)dss 60 - - v v gs =0, i d =250 a gate-threshold voltage v th(gs) 1 - 2.5 v v ds =v gs , i d =250 a gate-body leakage i gss - - 80 na v ds =0, v gs = 20v zero gate voltage drain current i dss - - 80 na v ds =60v, v gs =0 on-state drain current i d(on) 500 - - ma v gs =10v, v ds =7v drain-source on resistance r ds(on) - - 5 v gs =10v, i d =500ma - - 7 v gs =5v, i d =50ma forward trans conductance g fs 80 - - ms v ds =10v, i d =200ma drain-source on-voltage v ds(on) - - 3.75 v v gs =10v, i d =500ma - - 0.375 v gs =5v, i d =50ma diode forward voltage v sd 0.55 - 1.2 v i s =115ma, v gs =0 input capacitance c iss - 50 - pf v ds =25v v gs =0 f=1mhz output capacitance c oss - 25 - reverse transfer capacitance c rss - 5 - switching time turn-on time t d(on) - 20 - ns v dd =25v, r l =50 i d =500ma, v gen =10v r g =25 turn-off time t d(off) - 40 -
2N7002T 115ma, 60v, r ds(on) 5 n-channel plastic-encapsulate mosfets elektronische bauelemente 12-jun-2018 rev. d page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics
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